The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Mar. 16, 2007
Applicants:

Kevin Q. Yin, Irvine, CA (US);

Amol Kalburge, Irvine, CA (US);

David J. Howard, Irvine, CA (US);

Arjun Kar-roy, Irvine, CA (US);

Dieter Dornisch, Carlsbad, CA (US);

Inventors:

Kevin Q. Yin, Irvine, CA (US);

Amol Kalburge, Irvine, CA (US);

David J. Howard, Irvine, CA (US);

Arjun Kar-Roy, Irvine, CA (US);

Dieter Dornisch, Carlsbad, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one exemplary embodiment, a semiconductor die including at least one deep trench isolation region for isolating an electronic device (for example, a bipolar device) includes a trench situated in a substrate of the semiconductor die, where the trench has sides surrounding the electronic device, and where the trench has at least one trench chamfered corner formed between and connecting the sides of the trench. The at least one trench chamferred corner is formed between a chamfered corner of an outside wall of said trench and a corner of an inside wall of the trench. A trench corner width at the at least one trench chamfered corner is less than a trench side width along the sides of the trench.


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