The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Oct. 27, 2005
Leonard Forbes, Corvallis, OR (US);
Kie Y. Ahn, Chappaqua, NY (US);
Alan R. Reinberg, Cheshire, CT (US);
Leonard Forbes, Corvallis, OR (US);
Kie Y. Ahn, Chappaqua, NY (US);
Alan R. Reinberg, Cheshire, CT (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A non-volatile memory device has improved performance from a stressed, silicon nitride capping layer. The device is comprised of memory cells in a substrate that have source and drain regions. A tunnel dielectric is formed over the substrate between each pair of source and drain regions. If the memory device is an NROM, a nitride charge storage layer is formed over the tunnel dielectric. If the memory device is a flash memory, a floating gate is formed over the tunnel dielectric. An inter-gate insulator and control gate are then formed over the charge storage layer. The stressed, silicon nitride capping layer is formed over the control gate.