The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 29, 2006
Deok-sin Kil, Ichon-shi, KR;
Han-sang Song, Ichon-shi, KR;
Seung-jin Yeom, Ichon-shi, KR;
Ki-seon Park, Ichon-shi, KR;
Jae-sung Roh, Ichon-shi, KR;
Jin-hyock Kim, Ichon-shi, KR;
Deok-Sin Kil, Ichon-shi, KR;
Han-Sang Song, Ichon-shi, KR;
Seung-Jin Yeom, Ichon-shi, KR;
Ki-Seon Park, Ichon-shi, KR;
Jae-Sung Roh, Ichon-shi, KR;
Jin-Hyock Kim, Ichon-shi, KR;
Hynix Semiconductor, Inc., Gyeonggi-do, KR;
Abstract
A method for forming a zirconium oxide (ZrO) layer on a substrate in a chamber includes controlling a temperature of the substrate; and repeating a unit cycle of an atomic layer deposition (ALD) method. The unit cycle includes supplying a zirconium (Zr) source into a chamber, parts of the Zr source being adsorbed into a surface of the substrate; purging non-adsorbed parts of the Zr source remaining inside the chamber; supplying a reaction gas for reacting with the adsorbed parts of the Zr source; and purging non-reacted parts of the reaction gas remaining inside the chamber and reaction byproducts, wherein the temperature of the substrate and a concentration of the reaction gas are controlled such that the ZrOlayer is formed with a tetragonal structure.