The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 19, 2007
Applicant:
Kanta Saino, Tokyo, JP;
Inventor:
Kanta Saino, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes the step of depositing a doped silicon layer doped with a first-conductivity-type dopant and a non-doped silicon layer to form a layered silicon film, implanting a first-conductivity-type dopant into a portion of the layered silicon film disposed in a first region, implanting a second-conductivity-type dopant into a portion of the layered silicon film disposed in a second region, and heat treating the layered silicon film to form a first-conductivity-type silicon film in the first region and a second-conductivity-type silicon film in the second region.