The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 29, 2008
Mahalingam Nandakumar, Richardson, TX (US);
Wayne Bather, Silver Springs, MD (US);
Narendra Singh Mehta, Dallas, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Wayne Bather, Silver Springs, MD (US);
Narendra Singh Mehta, Dallas, TX (US);
Texas Instuments Incorporated, Dallas, TX (US);
Abstract
A method for semiconductor processing is provided, wherein a removal of one or more layers is aided by structurally weakening the one or more layers via ion implantation. A semiconductor substrate is provided having one or more primary layers formed thereon, and a secondary layer is formed over the one or more primary layers. One or more ion species are implanted into the secondary layer, therein structurally weakening the secondary layer, and a patterned photoresist layer is formed over the secondary layer. Respective portions of the secondary layer and the one or more primary layers that are not covered by the patterned photoresist layer are removed, and the patterned photoresist layer is further removed. At least another portion of the secondary layer is removed, wherein the structural weakening of the secondary layer increases a removal rate of the at least another portion of the secondary layer.