The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 29, 2008
Alan Bernard Botula, Essex Junction, VT (US);
Michael Lawrence Gautsch, Jericho, VT (US);
Alvin Jose Joseph, Williston, VT (US);
Max Gerald Levy, Essex Junction, VT (US);
James Albert Slinkman, Montpelier, VT (US);
Alan Bernard Botula, Essex Junction, VT (US);
Michael Lawrence Gautsch, Jericho, VT (US);
Alvin Jose Joseph, Williston, VT (US);
Max Gerald Levy, Essex Junction, VT (US);
James Albert Slinkman, Montpelier, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An electrical structure and method of forming. The method includes providing a semiconductor structure comprising a semiconductor substrate, a buried oxide layer (BOX) formed over the semiconductor substrate, and a silicon on insulator layer (SOI) formed over and in contact with the BOX layer. The SOI layer comprises shallow trench isolation (STI) structures formed between electrical devices. A first photoresist layer is formed over the STI structures and the electrical devices. Portions of said first photoresist layer, portions of the STI structures, and portions of the BOX layer are removed resulting in formed trenches. Ion implants are formed within portions of the semiconductor substrate. Remaining portions of the first photoresist layer are removed. A dielectric layer is formed over the electrical devices and within the trenches. A second photoresist layer is formed over the dielectric layer. Portions of the second photoresist layer are removed.