The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Oct. 18, 2007
Zhiyuan YE, Cupertino, CA (US);
Andrew Lam, San Francisco, CA (US);
Saurabh Chopra, Sunnyvale, CA (US);
Yihwan Kim, Milpitas, CA (US);
Zhiyuan Ye, Cupertino, CA (US);
Andrew Lam, San Francisco, CA (US);
Saurabh Chopra, Sunnyvale, CA (US);
Yihwan Kim, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.