The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 14, 2007
Norifumi Kameshiro, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Tomoyuki Ishii, Kokubunji, JP;
Toshiaki Sano, Tachikawa, JP;
Norifumi Kameshiro, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Tomoyuki Ishii, Kokubunji, JP;
Toshiaki Sano, Tachikawa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator layer and the source-drain material film in the opening portion. Thereafter, a gate material film embedding the opening portion is formed on the gate insulator. Subsequently, a cap film is formed on the gate material film, thereby forming the gate made of the gate material film. Then, a mask layer is formed on the source-drain material film. Next, the source-drain material film not protected by the mask layer is removed while protecting the gate by the cap film, thereby leaving the source-drain material film on both sides of the gate. The source-drain material film on one side becomes the source and that on the other side becomes the drain.