Fabrication method of semiconductor device

Abstract

A fabrication method of semiconductor device includes providing a substrate which has a plurality of electrical connection pads and is covered with an insulative layer, wherein the insulative layer has an opening formed for exposing the electrical connection pads; forming a filling material on the insulative layer of the substrate and compressing a semiconductor chip to the substrate through a plurality of bumps, the bumps electrically connecting the electrical connection pads and the filling material filling spacing between the semiconductor chip and the substrate so as to form a filling layer. By replacing the conventional underfilling process with the preprinting process of the filling material, the fabrication cost of the semiconductor device is reduced and the fabrication process is simplified.