The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Jan. 29, 2007
Applicants:

Masahiro Sumiya, Hikari, JP;

Tsutomu Iida, Hikari, JP;

Inventors:

Masahiro Sumiya, Hikari, JP;

Tsutomu Iida, Hikari, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing method using a plasma processing apparatus comprising a vacuum processing chamber, a substrate electrode having an electrostatic chucking film for chucking a material to be processed, an electrostatic chucking DC power supply and a substrate bias high-frequency power supply connected to the substrate electrode, and a plasma generating unit for generating the plasma in the vacuum processing chamber. The high-frequency voltage Vpp applied to the substrate electrode is monitored, and based on the Vpp signal thus monitored, the output voltage of the electrostatic chucking DC power supply is controlled thereby to maintain the voltage applied on the electrostatic chucking film at the desired value while at the same time controlling the output of the substrate bias high-frequency power supply in ramp with time.


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