The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Apr. 04, 2007
Tsutomu Tetsuka, Ibaraki-ken, JP;
Kazuyuki Ikenaga, Ibaraki-ken, JP;
Tetsuo Ono, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Naoshi Itabashi, Hachioji, JP;
Tsutomu Tetsuka, Ibaraki-ken, JP;
Kazuyuki Ikenaga, Ibaraki-ken, JP;
Tetsuo Ono, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Naoshi Itabashi, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.