The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Mar. 24, 2009
Nirmal Ramaswamy, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Cem Basceri, Reston, VA (US);
Eric R. Blomiley, Boise, ID (US);
Nirmal Ramaswamy, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Cem Basceri, Reston, VA (US);
Eric R. Blomiley, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.