The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2010

Filed:

Jun. 13, 2006
Applicants:

Regino Sandoval, Rochester Hills, MI (US);

Sergey A. Kostylev, Bloomfield Hills, MI (US);

Wolodymyr Czubatyj, Warren, MI (US);

Tyler Lowrey, San Jose, CA (US);

Inventors:

Regino Sandoval, Rochester Hills, MI (US);

Sergey A. Kostylev, Bloomfield Hills, MI (US);

Wolodymyr Czubatyj, Warren, MI (US);

Tyler Lowrey, San Jose, CA (US);

Assignee:

Ovonyx, Inc., Rochester Hills, MI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements, fast set speeds, high reset resistances and low set resistances.


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