The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Jan. 27, 2009
Fumito Isaka, Kanagawa, JP;
Sho Kato, Kanagawa, JP;
Kosei Nei, Kanagawa, JP;
Ryu Komatsu, Kanagawa, JP;
Tatsuya Mizoi, Yokohama, JP;
Akihisa Shimomura, Kanagawa, JP;
Fumito Isaka, Kanagawa, JP;
Sho Kato, Kanagawa, JP;
Kosei Nei, Kanagawa, JP;
Ryu Komatsu, Kanagawa, JP;
Tatsuya Mizoi, Yokohama, JP;
Akihisa Shimomura, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd, Atsugi-shi, Kanagawa-ken, unknown;
Abstract
An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.