The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Apr. 20, 2007
Prasad Venkatraman, Gilbert, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
Francine Y. Robb, Fountain Hills, AZ (US);
George Chang, Tempe, AZ (US);
Carroll Casteel, Chandler, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
Francine Y. Robb, Fountain Hills, AZ (US);
George Chang, Tempe, AZ (US);
Carroll Casteel, Chandler, AZ (US);
Semiconductor Componenets Industries, LLC, Phoenix, AZ (US);
Abstract
A semiconductor component resistant to the formation of a parasitic bipolar transistor and a method for manufacturing the semiconductor component using a reduced number of masking steps. A semiconductor material of N-type conductivity having a region of P-type conductivity is provided. A doped region of N-type conductivity is formed in the region of P-type conductivity. Trenches are formed in a semiconductor material and extend through the regions of N-type and P-type conductivities. A field oxide is formed from the semiconductor material such that portions of the trenches extend under the field oxide. The field oxide serves as an implant mask in the formation of source regions. Body contact regions are formed from the semiconductor material and an electrical conductor is formed in contact with the source and body regions. An electrical conductor is formed in contact with the backside of the semiconductor material.