The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Mar. 18, 2008
Hiroyuki Kitamura, Tokyo, JP;
Hiroyuki Kitamura, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device that is provided with a step of successively forming a gate insulating film and a gate electrode on a semiconductor substrate and a step of forming a silicon nitride film that covers at least the gate insulating film and the side portions of the gate electrode, in which the silicon nitride film is formed by laminating a plurality of silicon nitride layers by repeating a step of forming a silicon nitride layer of a predetermined thickness by the low-pressure chemical vapor deposition method and a step of exposing the silicon nitride layer to nitrogen.