The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Oct. 27, 2006
Cristopher M. Pavloff, Redwood City, CA (US);
Winsor Lam, Daly City, CA (US);
Tza-jing Gung, San Jose, CA (US);
Hong S. Yang, Pleasanton, CA (US);
Ilyoung Richard Hong, San Jose, CA (US);
Cristopher M. Pavloff, Redwood City, CA (US);
Winsor Lam, Daly City, CA (US);
Tza-Jing Gung, San Jose, CA (US);
Hong S. Yang, Pleasanton, CA (US);
Ilyoung Richard Hong, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.