The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 21, 2007
Christopher L. Hamlin, Los Gatos, CA (US);
Christopher L. Hamlin, Los Gatos, CA (US);
SuVolta, Inc., Los Gatos, CA (US);
Abstract
A circuit can include an amplifier having at least a first junction field effect transistor (JFET) of a first conductivity type with a source coupled to a first power supply node, and a drain coupled to an amplifier output node. A first variable bias circuit can be coupled between the drain and at least one gate of the first JFET. The first variable bias circuit can alter a direct current (DC) bias to the first JFET according a potential at the amplifier output node. A first bias impedance can be coupled between the drain of the first JFET and a second power supply node. The circuit can also include a non-linear transmission line (NLTL) coupled between the amplifier output and a gate of the first JFET. The NLTL being configured to propagate an electrical soliton.