The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
May. 31, 2007
Yu-hsien Lin, Hsinchu County, TW;
Wen-fang Lee, Hsinchu, TW;
Ya-huang Huang, Hsinchu, JP;
Ming-yen Liu, Hsinchu, TW;
Yu-kang Shen, Taipei County, TW;
Yu-Hsien Lin, Hsinchu County, TW;
Wen-Fang Lee, Hsinchu, TW;
Ya-Huang Huang, Hsinchu, JP;
Ming-Yen Liu, Hsinchu, TW;
Yu-Kang Shen, Taipei County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A multi-time programmable (MTP) memory includes a tunneling dielectric layer, a floating gate, an inter-gate dielectric layer and a control gate. The tunneling dielectric layer is disposed on a substrate. The floating gate is disposed on the tunneling dielectric layer. The inter-gate dielectric layer is disposed on the floating gate, and a thickness of the inter-gate dielectric layer at edges of the floating gate is larger than a thickness of the inter-gate dielectric layer in a central portion of the floating gate. The control gate is disposed on the inter-gate dielectric layer.