The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Dec. 29, 2005
Applicants:
Der-chyang Yeh, Hsinchu, TW;
Chie-iuan Lin, Hsinchu, TW;
Chuan-ying Lee, Hsinchu, TW;
Yi-ting Chao, Hsinchu, TW;
Ming-hsien Chen, Hsinchu, TW;
Inventors:
Der-Chyang Yeh, Hsinchu, TW;
Chie-Iuan Lin, Hsinchu, TW;
Chuan-Ying Lee, Hsinchu, TW;
Yi-Ting Chao, Hsinchu, TW;
Ming-Hsien Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower electrode plates and different compositions of capacitor dielectric layers.