The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Feb. 12, 2007
Chin-tsan Yeh, Hsinchu, TW;
Chih-hsien Lo, Hsinchu County, TW;
Chin-ta Su, Yunlin County, TW;
Kuang-chao Chen, Taipei, TW;
Chin-Tsan Yeh, Hsinchu, TW;
Chih-Hsien Lo, Hsinchu County, TW;
Chin-Ta Su, Yunlin County, TW;
Kuang-Chao Chen, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a non-volatile memory cell is provided. The method comprises: (a) providing a substrate; (b) forming a stacking structure on the substrate, the stacking structure at least comprising an oxide-nitride-oxide layer (ONO layer) and a polysilicon layer thereon; (c) patterning the stacking structure to form a plurality of separated stacking units, each two stacking units having an aperture therebetween; (d) forming a source region and a drain region buried in the substrate at two sides of the each stacking unit; (e) forming an oxide layer in the aperture and over the stacking units; and (f) performing a chemical mechanical polishing (CMP) process to remove the oxide layer over the stacking units and outside the aperture.