The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Jan. 07, 2009
Applicants:
Da Zhang, Hopewell Junction, NY (US);
Voon-yew Thean, Austin, TX (US);
Inventors:
Da Zhang, Hopewell Junction, NY (US);
Voon-Yew Thean, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor process and apparatus includes forming PMOS transistors () with enhanced hole mobility in the channel region by forming a hydrogen-rich silicon nitride layer () on or adjacent to sidewalls of the PMOS gate structure as either a hydrogen-rich implant sidewall spacer () or as a post-silicide hydrogen-rich implant sidewall spacer (), where the hydrogen-rich dielectric layer acts as a hydrogen source for passivating channel surface defectivity under the PMOS gate structure.