The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Dec. 13, 2007
Kiyoshi Nakai, Tokyo, JP;
Kiyoshi Nakai, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor memory device is provided that has a storage unit that includes an interlayer insulation film, a lower electrode layer embedded in the interlayer insulation film, and a recording layer and an upper electrode layer provided on the interlayer insulation film. When a predetermined current is passed to the storage unit, the recording layer is heated by substantially exceeding a melting point, and a cavity is formed near the interface between the recording layer and the lower electrode layer. As a result, the recording layer is physically separated from the lower electrode layer, and no current flows through the storage unit. When the recording layer is physically separated from the lower electrode layer, these layers cannot be returned to the contact state again. Therefore, information can be stored irreversibly.