The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Mar. 07, 2008
Applicants:

Yuh-turng Liu, Hsinchu, TW;

Shyan-yhu Wang, Hsinchu County, TW;

Inventors:

Yuh-Turng Liu, Hsinchu, TW;

Shyan-Yhu Wang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 23/58 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including a plurality of doped regions, a metal layer and a polysilicon layer is provided. The doped regions are disposed in a substrate. The metal layer includes a plurality of metal line patterns. The polysilicon layer disposed between the substrate and the metal layer includes a gate pattern and at least one guard ring pattern. The at least one guard ring pattern connects to the gate pattern and surrounds at least one of the metal line patterns. One of the metal line patterns connects to the gate pattern. The others of the metal line patterns connect to one of the doped regions in the substrate.


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