The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Nov. 18, 2008
Tsuyoshi Arigane, Akishima, JP;
Digh Hisamoto, Kokubunji, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Toshiyuki Mine, Fussa, JP;
Tsuyoshi Arigane, Akishima, JP;
Digh Hisamoto, Kokubunji, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Toshiyuki Mine, Fussa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Provided is a nonvolatile semiconductor memory device highly integrated and highly reliable. A plurality of memory cells are formed in a plurality of active regions sectioned by a plurality of isolations (silicon oxide films) extending in the Y direction and deeper than a well (p type semiconductor region). In each memory cell, a contact is provided in the well (p type semiconductor region) so as to penetrate through a source diffusion layer (ntype semiconductor region), and the contact that electrically connects bit lines (metal wirings) and the source diffusion layer (ntype semiconductor region) is also electrically connected to the well (p type semiconductor region).