The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Jun. 14, 2007
Young-lim Park, Anyang-si, KR;
Sung-lae Cho, Yongin-si, KR;
Byoung-jae Bae, Hwaseong-si, KR;
Jin-il Lee, Seongnam-si, KR;
Hye-young Park, Seongnam-si, KR;
Ji-eun Lim, Yongin-si, KR;
Young-Lim Park, Anyang-si, KR;
Sung-Lae Cho, Yongin-si, KR;
Byoung-Jae Bae, Hwaseong-si, KR;
Jin-il Lee, Seongnam-si, KR;
Hye-Young Park, Seongnam-si, KR;
Ji-Eun Lim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.