The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Feb. 01, 2007
Satoru Machida, Tokyo, JP;
Yasushi Ishii, Tokyo, JP;
Toshio Kudo, Tokyo, JP;
Masato Takahashi, Tokyo, JP;
Yukihiro Suzuki, Tokyo, JP;
Satoru Machida, Tokyo, JP;
Yasushi Ishii, Tokyo, JP;
Toshio Kudo, Tokyo, JP;
Masato Takahashi, Tokyo, JP;
Yukihiro Suzuki, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A memory cell has a control gate electrode disposed on a main surface of a semiconductor substrate through a gate insulating film, an ONO film disposed along a side surface of the control gate electrode and the main surface of semiconductor substrate, a memory gate electrode disposed on a side surface of the control gate electrode and also on the main surface of the semiconductor substrate through the ONO film. The control gate electrode and the memory gate electrode are formed, over the upper portions thereof, with a silicide film and an insulating film formed by oxidation of the surface of the silicide film, respectively.