The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Oct. 24, 2005
Jae-young Ahn, Gyeonggi-do, KR;
Jin-tae Noh, Gyeonggi-do, KR;
Hee-seok Kim, Gyeonggi-do, KR;
Jin-gyun Kim, Gyeonggi-do, KR;
Ju-wan Lim, Seoul, KR;
Sang-ryol Yang, Gyeonggi-do, KR;
Hong-suk Kim, Gyeonggi-do, KR;
Sung-hae Lee, Gyeonggi-do, KR;
Jae-Young Ahn, Gyeonggi-do, KR;
Jin-Tae Noh, Gyeonggi-do, KR;
Hee-Seok Kim, Gyeonggi-do, KR;
Jin-Gyun Kim, Gyeonggi-do, KR;
Ju-Wan Lim, Seoul, KR;
Sang-Ryol Yang, Gyeonggi-do, KR;
Hong-Suk Kim, Gyeonggi-do, KR;
Sung-Hae Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a capacitor having a bottom electrode, a dielectric layer formed on the bottom electrode, a top electrode formed on the dielectric layer, and a contact plug having a metal that is connected with the top electrode, wherein the top electrode includes a doped poly-SiGelayer and a doped polysilicon layer epitaxially deposited on the doped poly-SiGelayer and the contact plug makes a contact with the doped polysilicon layer.