The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Oct. 19, 2007
Kee-won Kim, Suwon-si, KR;
Young-jin Cho, Suwon-si, KR;
Hyung-soon Shin, Seoul, KR;
Sung-hoon Choa, Seoul, KR;
Seung-jun Lee, Seoul, KR;
In-jun Hwang, Yongin-si, KR;
Kee-won Kim, Suwon-si, KR;
Young-jin Cho, Suwon-si, KR;
Hyung-soon Shin, Seoul, KR;
Sung-hoon Choa, Seoul, KR;
Seung-jun Lee, Seoul, KR;
In-jun Hwang, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.