The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Aug. 17, 2007
Jin K. Kim, Albuquerque, NM (US);
Malcolm S. Carroll, Albuquerque, NM (US);
Aaron Gin, Albuquerque, NM (US);
Phillip F. Marsh, Lowell, MA (US);
Erik W. Young, Albuquerque, NM (US);
Michael J. Cich, Albuquerque, NM (US);
Jin K. Kim, Albuquerque, NM (US);
Malcolm S. Carroll, Albuquerque, NM (US);
Aaron Gin, Albuquerque, NM (US);
Phillip F. Marsh, Lowell, MA (US);
Erik W. Young, Albuquerque, NM (US);
Michael J. Cich, Albuquerque, NM (US);
Sandia Corporation, Albuquerque, NM (US);
Abstract
An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InGaSb with 0≦x≦0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 μm.