The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Feb. 06, 2006
Panya Wongsenakhum, Fremont, CA (US);
Juwen Gao, San Jose, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Panya Wongsenakhum, Fremont, CA (US);
Juwen Gao, San Jose, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention provides improved methods of depositing tungsten-containing films on substrates, particularly on silicon substrates. The methods involve depositing an interfacial or 'flash' layer of tungsten on the silicon prior to deposition of tungsten nitride. The tungsten flash layer is typically deposited by a CVD reaction of a tungsten precursor and a reducing agent. According to various embodiments, the tungsten flash layer may be deposited with a high reducing agent to tungsten-precursor ratio and/or at low temperature to reduce attack by the tungsten precursor. In many cases, the substrate is a semiconductor wafer or a partially fabricated semiconductor wafer. Applications include depositing tungsten nitride as (or as part of) a diffusion barrier and/or adhesion layer for tungsten contacts.