The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Dec. 21, 2001
Applicants:
Yuji Sato, Kanagawa, JP;
Shirou Yoshino, Kanagawa, JP;
Hiroshi Furukawa, Kanagawa, JP;
Hiroyuki Matsuyama, Kanagawa, JP;
Inventors:
Yuji Sato, Kanagawa, JP;
Shirou Yoshino, Kanagawa, JP;
Hiroshi Furukawa, Kanagawa, JP;
Hiroyuki Matsuyama, Kanagawa, JP;
Assignee:
Sumco Techxiv Corporation, Nagasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize a boron concentration in the thickness direction of the surface layer of the silicon wafer doped with boron.