The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Oct. 31, 2007
Kazushige Kawasaki, Tokyo, JP;
Toshiaki Kitano, Tokyo, JP;
Takafumi Oka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiOfilm; forming channels and a waveguide ridge between the channels in the wafer; forming an SiOfilm over the wafer; forming a resist pattern covering the SiOfilm in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiOfilm on the top of the waveguide ridge, the resist pattern exposing the SiOfilm on the top of the waveguide ridge; removing the SiOfilm and the deposited SiOfilm by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.