The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jan. 28, 2003
Atsuo Isobe, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Chiho Kokubo, Tochigi, JP;
Koichiro Tanaka, Kanagawa, JP;
Akihisa Shimomura, Kanagawa, JP;
Tatsuya Arao, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Mai Akiba, Kanagawa, JP;
Atsuo Isobe, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Chiho Kokubo, Tochigi, JP;
Koichiro Tanaka, Kanagawa, JP;
Akihisa Shimomura, Kanagawa, JP;
Tatsuya Arao, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Mai Akiba, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.