The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Dec. 13, 2007
Zhizheng Liu, San Jose, CA (US);
An Chen, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Sung-yong Chung, Santa Clara, CA (US);
Gulzar Ahmed Kathawala, Santa Clara, CA (US);
Ashot Melik-martirosian, Sunnyvale, CA (US);
Zhizheng Liu, San Jose, CA (US);
An Chen, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Sung-Yong Chung, Santa Clara, CA (US);
Gulzar Ahmed Kathawala, Santa Clara, CA (US);
Ashot Melik-Martirosian, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Systems and methods that facilitate improved programming memory cells in a nonvolatile memory (e.g., flash memory) are presented. An optimized voltage component can facilitate supplying respective voltages to a source, drain, and gate associated with a memory cell during operations, such as programming operations. The optimized voltage component can facilitate supplying a predetermined source bitline voltage to a memory cell during programming of the cell to facilitate reducing leakage currents associated with the bitlines, which can improve programming of the memory cell, and to facilitate reducing the programming current, which can result in power efficient programming and improved programming speed.