The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Oct. 04, 2007
William K. Henson, Beacon, NY (US);
Deok-kee Kim, Bedford Hills, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Byeongju Park, Plainview, NY (US);
William K. Henson, Beacon, NY (US);
Deok-Kee Kim, Bedford Hills, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Byeongju Park, Plainview, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An integrated eFUSE device is formed by forming a silicon 'floating beam' on air, whereupon the fusible portion of the eFUSE device resides. This beam extends between two larger, supporting terminal structures. 'Undercutting' techniques are employed whereby a structure is formed atop a buried layer, and that buried layer is removed by selective etching. Whereby a “floating” silicide eFUSE conductor is formed on a silicon beam structure. In its initial state, the eFUSE silicide is highly conductive, exhibiting low electrical resistance (the “unblown state of the eFUSE). When a sufficiently large current is passed through the eFUSE conductor, localized heating occurs. This heating causes electromigration of the silicide into the silicon beam (and into surrounding silicon, thereby diffusing the silicide and greatly increasing its electrical resistance. When the current source is removed, the silicide remains permanently in this diffused state, the “blown” state of the eFUSE.