The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2010

Filed:

Mar. 24, 2005
Applicants:

Shinya Sakurada, Tokyo, JP;

Naoki Shutoh, Yokohama, JP;

Shinsuke Hirono, Yokohama, JP;

Inventors:

Shinya Sakurada, Tokyo, JP;

Naoki Shutoh, Yokohama, JP;

Shinsuke Hirono, Yokohama, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/12 (2006.01); H01L 35/30 (2006.01); H01L 35/14 (2006.01); H01L 35/20 (2006.01); H01B 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thermoelectric material includes a composition represented by the following formula (A):(TiZrHf)NiSn  (A)where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35, and 30≦y≦35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be Iand I, respectively, a value of I/(I+I) is in a range of 0.2 to 0.8.


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