The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Oct. 17, 2008
Dennis Hausmann, Lake Oswego, OR (US);
James S. Sims, Tigard, OR (US);
Andrew Antonelli, Portland, OR (US);
Sesha Varadarajan, Lake Oswego, OR (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Dennis Hausmann, Lake Oswego, OR (US);
James S. Sims, Tigard, OR (US);
Andrew Antonelli, Portland, OR (US);
Sesha Varadarajan, Lake Oswego, OR (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.