The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Feb. 14, 2008
John D. Prymak, Greer, SC (US);
Chris Stolarski, Greenville, SC (US);
David Jacobs, Greer, SC (US);
Chris Wayne, Moore, SC (US);
Philip Lessner, Newberry, SC (US);
John T. Kinard, Greer, SC (US);
Alethia Melody, Greenville, SC (US);
Gregory Dunn, Arlington Heights, IL (US);
Robert T. Croswell, Elgin, IL (US);
Remy J. Chelini, Crystal Lake, IL (US);
John D. Prymak, Greer, SC (US);
Chris Stolarski, Greenville, SC (US);
David Jacobs, Greer, SC (US);
Chris Wayne, Moore, SC (US);
Philip Lessner, Newberry, SC (US);
John T. Kinard, Greer, SC (US);
Alethia Melody, Greenville, SC (US);
Gregory Dunn, Arlington Heights, IL (US);
Robert T. Croswell, Elgin, IL (US);
Remy J. Chelini, Crystal Lake, IL (US);
Kemet Electronics Corporation, Greenville, SC (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.