The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Jun. 12, 2007
Jin-sik Jung, Seoul, KR;
Hee-bom Kim, Suwon-si, KR;
Hoon Kim, Siheung-si, KR;
Sung-min Huh, Yongin-si, KR;
Jin-sik Jung, Seoul, KR;
Hee-bom Kim, Suwon-si, KR;
Hoon Kim, Siheung-si, KR;
Sung-min Huh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.