The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Oct. 19, 2005
Christelle Charpin-nicolle, Paris, FR;
Jean-yves Robic, Grenoble, FR;
Christelle Charpin-Nicolle, Paris, FR;
Jean-Yves Robic, Grenoble, FR;
Commissariat A l'Energie Atomique, Paris, FR;
Abstract
The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.