The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Mar. 17, 2006
Takashi Matsumoto, Yamanashi, JP;
Chitake Imazu, Yamanashi, JP;
Shigeru Hagihara, Yamanashi, JP;
Kazuhiro Kijima, Yamanashi, JP;
Osamu Abe, Yamanashi, JP;
Satoshi Hiraki, Yamanashi, JP;
Yuichiro Fujikawa, Yamanashi, JP;
Takashi Matsumoto, Yamanashi, JP;
Chitake Imazu, Yamanashi, JP;
Shigeru Hagihara, Yamanashi, JP;
Kazuhiro Kijima, Yamanashi, JP;
Osamu Abe, Yamanashi, JP;
Satoshi Hiraki, Yamanashi, JP;
Yuichiro Fujikawa, Yamanashi, JP;
Yamanashi University, Kofu-shi, JP;
Yamanashi Prefecture, Kofu-shi, JP;
Nakaya Ltd., Nakakoma-gun, JP;
Abstract
The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.