The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Aug. 02, 2006
Applicants:

Vladimir Faifer, San Jose, CA (US);

Phuc Van, San Jose, CA (US);

Inventors:

Vladimir Faifer, San Jose, CA (US);

Phuc Van, San Jose, CA (US);

Assignee:

Ahbee 1, L.P., Los Altos, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.


Find Patent Forward Citations

Faifer, Vladimir. (2010). Non contact method and apparatus for measurement of sheet resistance of p-n junctions (U.S. Patent No. 7741833). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7741833

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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