The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Mar. 24, 2005
Hiroaki Ohkubo, Kanagawa, JP;
Yasutaka Nakashiba, Kanagawa, JP;
Naoyoshi Kawahara, Kanagawa, JP;
Hiroshi Murase, Kanagawa, JP;
Naoki Oda, Tokyo, JP;
Tokuhito Sasaki, Tokyo, JP;
Nobukazu Ito, Tokyo, JP;
Hiroaki Ohkubo, Kanagawa, JP;
Yasutaka Nakashiba, Kanagawa, JP;
Naoyoshi Kawahara, Kanagawa, JP;
Hiroshi Murase, Kanagawa, JP;
Naoki Oda, Tokyo, JP;
Tokuhito Sasaki, Tokyo, JP;
Nobukazu Ito, Tokyo, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.