The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Aug. 04, 2008
Shin-chii LU, Hsinchu, TW;
Yu-ming Lin, Tainan County, TW;
Min-hung Lee, Taipei County, TW;
Zing-way Pei, Taichung, TW;
Wen Yi Hsieh, Hsinchu, TW;
Shin-Chii Lu, Hsinchu, TW;
Yu-Ming Lin, Tainan County, TW;
Min-Hung Lee, Taipei County, TW;
Zing-Way Pei, Taichung, TW;
Wen Yi Hsieh, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.