The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jul. 09, 2007
Daisuke Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Yoshiaki Hasegawa, Shiga, JP;
Kenichi Matsuda, Kyoto, JP;
Daisuke Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Yoshiaki Hasegawa, Shiga, JP;
Kenichi Matsuda, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor laser () includes a first cladding layer (), an active layer () and a second cladding layer (). A window region () including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face () and a rear end face () of a laser resonator. The window region () is formed by exposing the front end face () and the rear end face () to carbon fluoride (CF) plasma. The effective band gap of a portion of the active layer () disposed in the window region () is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.