The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2010

Filed:

Nov. 30, 2006
Applicants:

Shin'ichi Nakatsuka, Hino, JP;

Tsukuru Ohtoshi, Hanno, JP;

Kazunori Shinoda, Musashino, JP;

Akihisa Terano, Hachioji, JP;

Hitoshi Nakamura, Hachioji, JP;

Shigehisa Tanaka, Koganei, JP;

Inventors:

Shin'ichi Nakatsuka, Hino, JP;

Tsukuru Ohtoshi, Hanno, JP;

Kazunori Shinoda, Musashino, JP;

Akihisa Terano, Hachioji, JP;

Hitoshi Nakamura, Hachioji, JP;

Shigehisa Tanaka, Koganei, JP;

Assignee:

Opnext Japan, Inc., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.


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