The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Jun. 26, 2008
Kyoung Lae Cho, Yongin-si, KR;
Yoon Dong Park, Gyeonggi-do, KR;
Jun Jin Kong, Yongin-si, KR;
Jong Han Kim, Suwon-si, KR;
Jae Hong Kim, Seoul, KR;
Young Hwan Lee, Suwon-si, KR;
Heeseok Eun, Yongin-si, KR;
Seung-hwan Song, Incheon, KR;
Kyoung Lae Cho, Yongin-si, KR;
Yoon Dong Park, Gyeonggi-do, KR;
Jun Jin Kong, Yongin-si, KR;
Jong Han Kim, Suwon-si, KR;
Jae Hong Kim, Seoul, KR;
Young Hwan Lee, Suwon-si, KR;
Heeseok Eun, Yongin-si, KR;
Seung-Hwan Song, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.