The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Mar. 14, 2005
Hieu Van Tran, San Jose, CA (US);
Sang Thanh Nguyen, Union City, CA (US);
Anh Ly, San Jose, CA (US);
Hung Q. Nguyen, Fremont, CA (US);
Wingfu Aaron Lau, San Jose, CA (US);
Nasrin Jaffari, Santa Clara, CA (US);
Thuan Trong VU, San Jose, CA (US);
Vishal Sarin, Cupertino, CA (US);
Loc B. Hoang, San Jose, CA (US);
Hieu Van Tran, San Jose, CA (US);
Sang Thanh Nguyen, Union City, CA (US);
Anh Ly, San Jose, CA (US);
Hung Q. Nguyen, Fremont, CA (US);
Wingfu Aaron Lau, San Jose, CA (US);
Nasrin Jaffari, Santa Clara, CA (US);
Thuan Trong Vu, San Jose, CA (US);
Vishal Sarin, Cupertino, CA (US);
Loc B. Hoang, San Jose, CA (US);
Silicon Storage Technology, Inc., Sunnyvale, CA (US);
Abstract
A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.