The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2010

Filed:

Nov. 30, 2006
Applicants:

Richard Johannes Franciscus Van Haren, Waalre, NL;

Sami Musa, Veldhoven, NL;

Inventors:

Richard Johannes Franciscus Van Haren, Waalre, NL;

Sami Musa, Veldhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/76 (2006.01); G01F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Alignment marks for use on substrates. An exemplary implementation provides phase depth control. A grating mark, for example, can be etched on a silicon wafer with sub-wavelength segmentation in the spacing portion of the alignment grating's period. The sub-wavelength segmentation can be applied to the spaces or to the lines, or both, of an alignment grating to control the phase depth of the grating. By applying segmentation with a period smaller than the alignment light wavelength in either the space(s) and/or in the line(s) of the grating, the effective refractive index in that region can be manipulated. This change in the effective index will result in a change in the phase depth (optical path length). By varying the duty cycle of the sub-wavelength segmented region, the effective refractive index can be controlled, thereby providing selective control over the phase depth.


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